Reliability of Single-Electron Logic Gates
نویسنده
چکیده
This paper investigates the relationship between a single-electron gate probability of failure and the random variations affecting its elements. The study focuses on digital logic gates and circuits. Two major implementations are considered: static complementary logic gates and threshold logic gates (TLG). In addition to implementation, the effect of the gate fan-in on the reliability is investigated. The results show that the type of implementation strongly affects the gate’s intrinsic robustness to variations. A static SET gate has a higher probability of failure than a SET TLG implementing the same function. Regarding fan-in, the results show that the probability of failure of TLGs increases with increasing fan-in. The results of this study indicate that the neural inspired threshold logic gates are more suitable for the emerging SET technology than the static complementary gates used in current technology. Key-Words: Reliability, Single-Electron, Threshold Gates, Static Gates, Statistical Model.
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